DTS3419品牌授权规格书.pdf

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1、1P-Channel 20 V(D-S)MOSFETFEATURESTrenchFET Power MOSFET100%Rg TestedBuilt-in ESD Protection-Typical ESD Performance 3000 VAPPLICATIONSPower Management for Portable and Consumer-Load Switches-DC/DC ConvertersNotes:a.TC=25 C.b.Surface mounted on 1 x 1 FR4 board.c.t=5 s.d.Maximum under steady state co

2、nditions is 175 C/W.PRODUCT SUMMARY VDS(V)RDS(on)()Max.ID(A)aQg(Typ.)-200.0320 at VGS=-4.5 V-5.913.8 nC0.0410 at VGS=-2.5 V-5.20.0675 at VGS=-1.8 V-4.3ABSOLUTE MAXIMUM RATINGS(TA=25 C,unless otherwise noted)ParameterSymbolLimitUnitDrain-Source Voltage VDS-20VGate-Source Voltage VGS 8Continuous Drain

3、 Current(TJ=150 C)TC=25 CID-5.9ATC=70 C-4.7TA=25 C-4.5b,cTA=70 C-3.6b,cPulsed Drain Current(t=300 s)IDM-20Continuous Source-Drain Diode CurrentTC=25 CIS-1.4TA=25 C-1b,cMaximum Power DissipationTC=25 CPD1.7WTC=70 C1.1TA=25 C1b,cTA=70 C0.6b,cOperating Junction and Storage Temperature Range TJ,Tstg-55

4、to 150CSoldering Recommendations(Peak Temperature)d,e260THERMAL RESISTANCE RATINGS ParameterSymbol TypicalMaximumUnitMaximum Junction-to-Ambientb,dt 5 sRthJA100130C/WMaximum Junction-to-Foot(Drain)Steady StateRthJF6075 DTS34?GSOT-23SDTop View231SGDP-Channel MOSFET2Notes:a.Pulse test;pulse width 300

5、s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in

6、 the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS(TJ=25 C,unless otherwise noted)ParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V

7、,ID=-250 A-20VVDS Temperature CoefficientVDS/TJ ID=-250 A-14mV/CVGS(th)Temperature CoefficientVGS(th)/TJ 2.5Gate-Source Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-0.4-1VGate-Source LeakageIGSSVDS=0 V,VGS=8 V 10AVDS=0 V,VGS=4.5 V 1Zero Gate Voltage Drain CurrentIDSSVDS=-20 V,VGS=0 V-1VDS=-20 V,VGS=0 V

8、,TJ=55 C-10On-State Drain CurrentaID(on)VDS-5 V,VGS=-4.5 V-15ADrain-Source On-State ResistanceaRDS(on)VGS=-4.5 V,ID=-4 A 0.02650.0320VGS=-2.5 V,ID=-4 A 0.03400.0410VGS=-1.8 V,ID=-2 A 0.04650.0675DynamicbTotal Gate ChargeQgVDS=-10 V,VGS=-8 V,ID=-4.5 A23.836nCVDS=-10 V,VGS=-4.5 V,ID=-4.5 A13.821Gate-S

9、ource ChargeQgs1.9Gate-Drain ChargeQgd3Gate ResistanceRgf=1 MHz2.21122Turn-On Delay Timetd(on)VDD=-10 V,RL=2.8 ID -3.6 A,VGEN=-4.5 V,Rg=1 2233nsRise Timetr2132Turn-Off Delay Timetd(off)6293Fall Timetf1421Turn-On Delay Timetd(on)VDD=-10 V,RL=2.8 ID -3.6 A,VGEN=-8 V,Rg=1 918Rise Timetr612Turn-Off Dela

10、y Timetd(off)6598Fall Timetf1523Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC=25 C-1.4APulse Diode Forward CurrentISM-20Body Diode VoltageVSDIS=-3.6 A,VGS=0 V-0.8-1.2VBody Diode Reverse Recovery TimetrrIF=-3.6 A,dI/dt=100 A/s,TJ=25 C1320nsBody Diode Reverse Recover

11、y ChargeQrr510nCReverse Recovery Fall Timeta8nsReverse Recovery Rise Timetb5 DTS34?3TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Gate Current vs.Gate-Source VoltageOutput CharacteristicsOn-Resistance vs.Drain Current0.000 0.010 0.020 0.030 0.040 0.050 0 3 6 9 12 15 IGSS-Gate Current(mA)VGS-Ga

12、te-Source Voltage(V)TJ=25 C 0 3 6 9 12 15 00.511.52ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)VGS=1.5 V VGS=8 V thru 2 VVGS=1 V 0 0.02 0.04 0.06 0.08 0.1 05101520RDS(on)-On-Resistance()ID-Drain Current(A)VGS=1.8 V VGS=2.5 V VGS=4.5 V Gate Current vs.Gate-Source VoltageTransfer CharacteristicsC

13、apacitance10-910-810-710-610-510-410-310-20 4 8 12 16 20 IGSS-Gate Current(A)VGS-Gate-to-Source Voltage(V)TJ=150 C TJ=25 C 0 0.1 0.2 0.3 0.4 0.5 00.350.71.051.4ID-Drain Current(A)VGS-Gate-to-Source Voltage(V)TC=25 C TC=125 C TC=-55 C 0 500 1000 1500 2000 05101520C-Capacitance(pF)VDS-Drain-to-Source

14、Voltage(V)Ciss Coss Crss DTS34?4TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Gate ChargeSingle Pulse Power,Junction-to-AmbientSoure-Drain Diode Forward Voltage0 2 4 6 8 0510152025VGS-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VDS=16 V VDS=5 V VDS=10 V ID=4.5 A 01020300.0010.010.1110100T

15、ime(s)Power(W)0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 IS-Source Current(A)VSD-Source-to-Drain Voltage(V)TJ=150 C TJ=25 C On-Resistance vs.Junction TemperatureThreshold VoltageOn-Resistance vs.Gate-to-Source Voltage0.7 0.9 1.1 1.3 1.5-50-25 0 25 50 75 100 125 150 RDS(on)-On-Resistance(Normalized)TJ-Junc

16、tion Temperature(C)ID=4 A VGS=4.5 V VGS=2.5 V 0.2 0.3 0.4 0.5 0.6 0.7-50-25 0 25 50 75 100 125 150 VGS(th)(V)TJ-Temperature(C)ID=250 A 0.000 0.020 0.040 0.060 0.080 02468RDS(on)-On-Resistance()VGS-Gate-to-Source Voltage(V)TJ=125 C TJ=25 C ID=4 A DTS34?5TYPICAL CHARACTERISTICS 25 C,unless otherwise n

17、oted*The power dissipation PD is based on TJ(max.)=150 C,using junction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating falls below the packagelimit.Safe Op

18、erating Area,Junction-to-AmbientPower Junction-to-Case0.001 0.01 0.1 1 10 100 0.1110100ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)*VGS minimum VGS at which RDS(on)is specified 100 ms Limited by RDS(on)*1 ms TA=25 C Single Pulse BVDSS Limited 10 ms 100 s 10 s,1 s DC 0 0.5 1 1.5 2 0 25 50 75 100

19、 125 150 Power(W)TC-Case Temperature(C)Current Derating*Power Junction-to-Ambient0 1.4 2.8 4.2 5.6 7 0 25 50 75 100 125 150 ID-Drain Current(A)TC-Case Temperature(C)0.0 0.2 0.4 0.5 0.7 0.9 0 25 50 75 100 125 150 Power(W)TA-Ambient Temperature(C)DTS34?6TYPICAL CHARACTERISTICS(25 C,unless otherwise no

20、ted)Normalized Thermal Transient Impedance,Junction-to-Ambient10-310-2000101110-110-41000.20.1Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.01Duty Cycle=0.5Single Pulse0.020.050.001t1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=175 C/W3.TJM-TA=PDMZthJA(t)t1t24.

21、Surface MountedNormalized Thermal Transient Impedance,Junction-to-Foot10.10.010.2Duty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal ImpedanceSingle Pulse0.110-310-2110-110-40.020.05 DTS34?1SOT-23(TO-236):3-LEADbEE1132See1DA2AA1CSeating Plane0.10 mm0.004CCL1LqGauge Plane

22、Seating Plane0.25 mmDimMILLIMETERS INCHES Min Max Min Max A0.891.120.0350.044A10.010.100.00040.004A20.881.020.03460.040b0.350.500.0140.020c0.0850.180.0030.007D2.803.040.1100.120E2.102.640.0830.104E11.201.400.0470.055e0.95 BSC0.0374 Refe11.90 BSC0.0748 RefL0.400.600.0160.024L10.64 Ref0.025 RefS0.50 R

23、ef0.020 Refq3838ECN:S-03946-Rev.K,09-Jul-01DWG:5479Package Information?1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SOT-230.106(2.692)Recommended Minimum PadsDimensions in Inches/(mm)0.022(0.559)0.049(1.245)0.029(0.724)0.037(0.950)0.053(1.341)0.097(2.459)Return to IndexReturn to IndexA

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