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1、1These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on)and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers,PCMCIA card
2、s,cellular and cordless telephones.VDS(V)rDS(on)()ID(A)0.700 VGS=10 V1.11.200 VGS=5.5V0.8PRODUCT SUMMARY150N-Channel 150V(D-S)MOSFETLow rDS(on)provides higher efficiency and extends battery lifeLow thermal impedance copper leadframeTSOP-6 saves board spaceFast switching speedHigh performance trench
3、technologyNotesa.Surface Mounted on 1”x 1”FR4 Board.b.Pulse width limited by maximum junction temperatureSymbol Maximum UnitsVDS150VGS20Continuous Drain CurrentaTA=25oCID1.1IDM10IS1.1APower DissipationaTA=25oCPD1.15WTJ,Tstg-55 to 150oCOperating Junction and Storage Temperature RangeContinuous Source
4、 Current(Diode Conduction)aABSOLUTE MAXIMUM RATINGS(TA=25 oC UNLESS OTHERWISE NOTED)ParameterPulsed Drain CurrentbVGate-Source VoltageDrain-Source VoltageASymbolTypMaxt=10 sec93110Steady State130150THERMAL RESISTANCE RATINGSMaximum Junction-to-AmbientaoC/WRthJAParameterTSOP-6Top ViewDDSDDG123654D1S1
5、G1N-Channel MOSFETF Si 34 4 0DV/MC34 4 0DV2Notesa.Pulse test:PW=300us duty cycle=2%.b.Guaranteed by design,not subject to production testing.MinTypMaxGate-Threshold VoltageVGS(th)VDS=VGS,ID=250 uA1.0VGate-Body LeakageIGSSVDS=0 V,VGS=8 V100nAVDS=120 V,VGS=0 V1VDS=120 V,VGS=0 V,TJ=55oC10On-State Drain
6、 CurrentAID(on)VDS=5 V,VGS=10 V10AVGS=10 V,ID=1.1 A700VGS=5.5 V,ID=0.8 A1200Forward TranconductanceAgfsVDS=10 V,ID=1.1 A11.3SDiode Forward VoltageVSDIS=1.6 A,VGS=0 V0.75VTotal Gate ChargeQg7.0Gate-Source ChargeQgs1.1Gate-Drain ChargeQgd2.0Turn-On Delay Timetd(on)8Rise Timetr24Turn-Off Delay Timetd(o
7、ff)35Fall-Timetf10mParameterLimitsUnitVDD=10 V,RL=15,ID=1 A,VGEN=4.5 VVDS=10 V,VGS=5.5 V,ID=1.1 AnCnsDynamicbSPECIFICATIONS(TA=25oC UNLESS OTHERWISE NOTED)uAIDSSZero Gate Voltage Drain CurrentStaticTest ConditionsSymbolDrain-Source On-ResistanceArDS(on)FREESCALE reserves the right to make changes wi
8、thout further notic e to any products herein.freescale makes no warranty,representation or guarantee regarding the suitability of its products for any particular purpose,nor does freescale assume any liability arising ou t of the application or use of any product or circuit,and specifically disclaim
9、s any and all liability,including without limitation special,consequential or incidental damages.“Typical”parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.All operating parameters,inclu
10、ding“Typicals”must be validated for each customer application by customers technical experts.freescale does not convey any license under its patent rights nor the rights of others.freescale products are not designed,intended,or authorized for use as components in systems intended for surgical implan
11、t into the body,or other applications intended to support or sustain life,or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.Should Buyer purchase or use freescale products for any such unintended or unauthoriz
12、ed application,Buyer shall indemnify and hold freescaleand its officers,employees,subsidiaries,affiliates,and distributors harmless against all claims,costs,damages,and expenses,and reasonable attorney fees arising out of,directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use,even if such claim alleges that freescale was negligent regarding the design or manufacture of the part.freescale is an Equal Opportunity/Affirmative Action Employer.F Si 34 4 0DV/MC34 4 0DV3Package InformationTSOP-6:6LEADF Si 34 4 0DV/MC34 4 0DV