三星FLASH命名规则说课材料.doc

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1、Good is good, but better carries it.精益求精，善益求善。三星FLASH命名规则-SamsungnandflashIDspec三星在nandflash存储方面也是投入了很多精力，对于purenandflash、OneNAND（带controller的nandflash模块）以及nand的驱动都有很深层的开发。后面说的nand都会基于Samsung的产品，包括驱动。三星的purenandflash（就是不带其他模块只是nandflash存储芯片）的命名规则如下：1.Memory(K)2.NANDFlash:93.SmallClassification(SLC:S

2、ingleLevelCell,MLC:MultiLevelCell,SM:SmartMedia,S/B:SmallBlock)1:SLC1ChipXDCard2:SLC2ChipXDCard4:SLC4ChipXDCardA:SLC+MuxedI/FChipB:MuxedI/FChipD:SLCDualSME:SLCDUAL(S/B)F:SLCNormalG:MLCNormalH:MLCQDPJ:Non-MuxedOneNandK:SLCDieStackL:MLCDDPM:MLCDSPN:SLCDSPQ:4CHIPSMR:SLC4DIESTACK(S/B)S:SLCSingleSMT:SLCS

3、INGLE(S/B)U:2STACKMSPV:4STACKMSPW:SLC4DieStack45.Density12:512M16:16M28:128M32:32M40:4M56:256M64:64M80:8M1G:1G2G:2G4G:4G8G:8GAG:16GBG:32GCG:64GDG:128G00:NONE67.organization00:NONE08:x816:x168.VccA:1.65V3.6VB:2.7V(2.5V2.9V)C:5.0V(4.5V5.5V)D:2.65V(2.4V2.9V)E:2.3V3.6VR:1.8V(1.65V1.95V)Q:1.8V(1.7V1.95V)

4、T:2.4V3.0VU:2.7V3.6VV:3.3V(3.0V3.6V)W:2.7V5.5V,3.0V5.5V0:NONE9.Mode0:Normal1:DualnCE&DualR/nB4:QuadnCE&SingleR/nB5:QuadnCE&QuadR/nB9:1stblockOTPA:MaskOption1L:Lowgrade10.GenerationM:1stGenerationA:2ndGenerationB:3rdGenerationC:4thGenerationD:5thGeneration11.12.PackageA:COBB:TBGAC:CHIPBIZD:63-TBGAE:T

5、SOP1(Lead-Free,1217)F:WSOP(Lead-Free)G:FBGAH:TBGA(Lead-Free)I:ULGA(Lead-Free)J:FBGA(Lead-Free)K:TSOP1(1217)L:LGAM:TLGAN:TLGA2P:TSOP1(Lead-Free)Q:TSOP2(Lead-Free)R:TSOP2-RS:SMARTMEDIAT:TSOP2U:COB(MMC)V:WSOPW:WAFERY:TSOP113.TempC:CommercialI:IndustrialS:SmartMediaB:SmartMediaBLUE0:NONE(ContainingWafer

6、,CHIP,BIZ,Exceptionhandlingcode)3:WaferLevel314.BadBlockA:AppleBadBlockB:IncludeBadBlockD:DaisychainSampleK:SandiskBinL:15BadBlockN:ini.0blk,add.10blkS:AllGoodBlock0:NONE(ContainingWafer,CHIP,BIZ,Exceptionhandlingcode)15.NAND-Reserved0:Reserved16.PackingType-Commontoallproducts,exceptofMaskROM-DividedintoTAPE&REEL(InMaskROM,dividedintoTRAY,AMMOPackingSeparately)1718.CustomerCustomerListReference-