Power-MOSFET.ppt

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1、 SemiconductorOptoelectronsDiscrete ( 7% )IC ( 84% )Sensors ( 3% )Digital IC ( 85 % ) Analog IC ( 15 % ) ( Memory , Logic , Micro- )DiodesTransistorThyristorRectifier. Power MOSFET. Bipolar. IGBTSLAI ( 40% )( Standard Linear Analog IC )ASAI ( 60% ) ( Application Specific Analog IC ). Amplifier. Volt

2、age Regulator. Data Conversion. Interface. Telecom . Automotive. Consumer. Computer ( 50 % )Power ManagementPower MOSFET ( Power Supply & Load Switch )PWM , Switching mode( Pulse Width Modulation )LDO , Linear Regulator( Low Drop Out )( easy to design , low cost )( complex design , high cost )( low

3、Ron , high switching speed ) SOLUTIONSSILICON TECHNOLOGIES ANALOG CIRCUIT DESIGN APPLICATIONS SCIENCE POWER DEVICE DESIGN ANALOGICPOWER MANAGEMENT&CONVERSIONAPPLICATIONSPOWERMOSFETPOWERMOSFETSchottkyDiodeComputer &PeripheralsTelecom&DatacomIndustrial&MilitaryBattery ManagementDC-DC ConversionAC-DC C

4、onversionBatteryManagementDC-DCConversionAC-DCConversion Battery Protection Load Switch AC-DC Adapter Off - Line SMPS DC-DC Synch. Buck DC-DC BoostTotal Design Solution : 1 MOSFET (dual die) + 1 Analog ICPCMLi Battery CellsCell PhoneLi Battery Pack+=Total Design Solution: 1 MOSFET (dual die) + 1 Ana

5、log ICTotal Design Solution: 1 N-Ch MOSFET + 1 P-Ch MOSFETQ 2Q 1Total Design Solution: 2 MOSFETs + PWM DRIVERDISPLAYDRIVERSTELECOM.CIRCUITS AUTOMOTIVE ELECTRONICS POWER SUPPLIESDEVICE BLOCKING VOLTAGE RATING (VOLTS)DEVICE CUURRNET RATING ( AMPERES)10100100010,000 100 0.010.1110 1000 LAMP BALLAST MOT

6、OR CONTROL TRACTION HVDCFACTORYAUTOMAT.These can be divided into six types : 1. pn diodes2. Schottky diodes3. Thyristors4. Power bipolar5. Power MOSFET6. Insulated - Gate Bipolar Transistor ( IGBT )1950 1960 1970 1980 1990 2000 Thyristor ( SCR )Power bipolarPower MOSFET VMOSIGBTUMOS / Trench MOSFETC

7、ool MOS DRAINSOURCEN+P-BASEGATEN-N+RCHRDHIGH FIELDPOINTCELL PITCH = 40 MICRONSVMOS STRUCTURE(1975)DRAINSOURCEN+P-BASEN-N+RCHRDJFET REGIONCELL PITCH = 20 MICRONSDMOS STRUCTURE(1978)GATERJDRAINSOURCEN+P-BASEN-N+RCHRDCELL PITCH = 6 MICRONSEXTFET STRUCTURE(1992)GATEDRAINSOURCEN+P-BASEN-N+RCHRDCELL PITCH

8、 = 6 MICRONSUMOS STRUCTURE(1990)GATE1. Square Cell GeometryTRENCH2. Strip Cell Geometry3. Hexgonal Cell GeometryGate contact padSource contact areaTermination field Active cell areaDrain contact on backside. VF : The Diode Forward Voltage ( V ) - Maximum forward drop of the body -drain diode at a sp

9、ecified value of source current - Max. value of 1.6 V for high voltage devices ( 100 V ) , and 1.0 V for low voltage devices ( 100 V ). VGS (on) : Gate - Source Voltage ( V ) - Induce a channel for current to flow between drain to source - Control channel conductivity. Vth : Gate - Source Threshold

10、Voltage - Voltage to form a conducting channel under the poly - Vth is usually measured at a IDSS ( drain - source ) of 250 uA - Increase with gate oxide thickness and body doping conc. VDS : Drain - Source Voltage , in On state - Cause drain current , ID to flow through the channel . ID , Drain Cur

11、rent ( A ) , in On state - Current flow between drain and source of the MOSFET - Dependent on VGS and VDS applied. BVDSS : Breakdown Voltage ( V ) , in Off state - Voltage at which the reverse biased body drift diode breakdown to cause drain - source current flow by the avalanche process , while gat

12、e and source are shorted together ( VGS = 0 ) - Normally measured at 250 uA drain current a). Avalanche breakdown : Mobile carriers sudden breakdown caused by increasing electric field in the depletion region of body-drain pn junction b). Punch-through breakdown : Avalanche breakdown occurring when

13、the depletion region of the body -drain junction contacts the source region c). Reach -through breakdown : Avalanche breakdown occurring when the depletion region of the epitaxy ( N - )contacts the high doping substrate . BVDSS character , in Off state VDSIDSSBVDSSSharp BVSoft BV. IDSS : Drain to So

14、urce leakage current when it is an off state where gate is shorted to source , larger with temp. increase . Qg : Total Gate Charge ( nC ) - It affect the speed of MOSFET to turn on and off - Lower Qg = faster td ( on ) , tr , td( off ) and tf = higher efficiency . Pd : Maximum Power Dissipation ( W

15、) - Any device dissipate power as heat - Amount of heat generated is determined by voltage across the MOSFET ( drain to source ) and the current passing through it - P = VDS * ID or ID2 * RDS ( on ) . RDS(on) : On - Resistance ( Ohms ) - Resistance to current flowing through the MOSFET - Lower RDS(o

16、n) = less power loss = less heat = longer battery life RDS(on) = Rch + Repi + Rsub + Rwcml ( contact + metal + pack ) bond WireContact MetalLeadframe Metal* Low Voltage MOSFET : Channel Resistance is the Most important High Voltage MOSFET : EPI resistance is the Most importantabN+ SubstrateN- Drift

17、LayerP baseN+N+Poly-SiPoly-SiRon,sp = ( V / I ) * ( A / W ) = b2 * Vd / 4a * I ohm-cm2Chip Area * Turn-On ResistanceVoltage Regulator Module Synchronous Buck Converter Application - Minimize RDS (on ) and Low Rg- Shoot through immunity , Low diode losses - Low FOM ( Figure of Merit ): RDS (on) x QGD

18、Low Voltage MOSFET Evolution 101520253035400.140.150.160.170.18VGate to Source = 15VVDrain to Source = 8V Polysilicon window (Pw) = 13 mHalf Cell Area = (Pw + Gate length)/2) * 1 mRon,sp = Ron * Half Cell AreaRon,sp(ohm-cm2)Polysilicon Gate Length ( m)JEFT Rs increase cause Trench DMOSRdRaRchn+R+P -

19、 BODYN - DRIFTRSN+SUBDRAIN+n Planar MOSFET Structure Features:- Easy to make (Several m process)- Low Production cost - Suitable for High Voltage Product - Bigger chip is required with same Rds(on) Trench MOSFET Structure Features:- Reduce Channel Resistance compared with Planar- Suitable for Low Vo

20、ltage / Low Rds(on) MOSFET - Smaller chip is required with same Rds(on) - Difficult to make (sub m /under Half m process)- High Production cost 198019851990199520002005Technology Migration of Power Discrete Devices CET / APEC - 8 Mcells/in2Next GenerationFAIRCHILD - 40 Mcells/in2TOSHIBA - 24 Mcells/

21、in2107109108106300 Mcell/in258321288 Mcell/in23Trench Gate TechnologyPlanar Gate TechnologyCell Density(cells/inch2)Year“ Strip cell and Square cell “Cell pitch = TR width + mesa widthRDS(on) = RN+RCH+RA+RD+RSUBRARN+RCHRSUBRDCan gain lower RDS(on) Without JFET effect N+GateP WellN- Drift RegionN+ Su

22、brateAAAAThe peak p-base doping control the Vth N + sourceP-baseN- drift0.5 um TR MOSFET1P1M NMOS / PMOSwith ESD and non ESD 2P1M NMOS / PMOS with ESD 0.4 um TR MOSFET1P1M NMOS / PMOSwith ESD and non ESD 2P1M NMOS / PMOS with ESD 0.2 um TR MOSFET1P1M NMOS / PMOSwith ESD and non ESD 2P1M NMOS / PMOS

23、with ESD Platform for Trench MOSFET Technology ( 12 V 150 V )High Gox integrity Low Ron High switching Low RgN+ SubstrateN -EpiP- BodyP-BodyN+ sourceField oxideMetalBPSGMetalPolyS.LActive cell Terminationgate bussource metalField oxide & Field plateGate metalN+ SubrateN- Epitaxial LayerN+ SubrateP W

24、ellN- Drift RegionN+ SubrateP WellP WellN- Drift RegionN+ SubrateB11 impGateP WellP WellN- Drift RegionN+ SubrateGateP WellP WellN- Drift RegionN+ SubrateN+N+AsP/RP/RP+P+N+N+GateP WellP WellN- Drift RegionN+ SubrateP/ROxideBF2P+N+N+P+GateP WellP WellN- Drift RegionN+ SubrateSourceDrainOxideepiTherma

25、loxidePad SiO21PBPSGNSGMetalNSGPSGSubstrateepiOxideSiNBody I/I1PPRN+P+MetalTi/TiNThe Basic Device Structure of Trench MOSFET TypicalMinMaxVSD (V)Is=250uA, Vgs=0V 0.7V04Compliance: 10VIGSSF (nA)Vgs=20V, Vds=0V 1 nA0100Compliance: 1 mAIGSSR (nA)Vgs= -20V, Vds=0V - 1 nA0-100Compliance: 1 mAVT_50uA (V)I

26、d=50uA, Vgs=Vds1.4 V0.72.1Compliance: 10V G&D ShortVT_250uA (V)Id=250uA, Vgs=Vds1.5 V0.82.2Compliance: 10V G&D ShortIDSS (nA)Vds= 30V, Vgs=0V 34 V30Compliance: 45 VNMOS 30 V Gate oxide : 500 ATest ItemTest ConditionsLimitsNOTE - Main die test : 30V NMOS w/o ESDTrench MOSFET Device Measure Service -

27、Main die test report sample for 25V NMOSFETTrench MOSFET Device Measure ServiceParameter VSD VT(50uA) VT(250uA) IGSSF IGSSR IDSS BVDS Unit V V V nA nA nA VControl_High 42.42.51000100045Control_Low 00.80.90-100025Scrap_High 42.42.51000100045Scrap_Low 00.80.90-100025101_1 0.4511.381.50.448-0.4411.9231

28、.801_2 0.4731.381.490.438-0.4451.8232.101_3 0.4711.451.570.436-0.4561.8732.101_4 0.471.431.550.441-0.4561.8932.201_5 0.4691.41.520.484-0.4321.8732.201_6 0.4671.421.540.437-0.4331.8532.301_7 0.4751.451.570.434-0.4621.932.401_8 0.4741.321.430.431-0.4471.8732.2Trench N MOSFET Device Performance * NMOS

29、550A Gate Oxide Integrity , forward and reverse bias Trench P MOSFET Device Performance * PMOS 300A Gate Oxide Integrity , forward and reverse bias 1.0E-131.0E-121.0E-111.0E-101.0E-091.0E-081.0E-071.0E-061.0E-05-30-20-100102030VG(V)VG(V)IG(A)IG(A)Trench N MOSFET Device Performance * 30V NMOS Source

30、- Drain reverse bias BV test I-V curve 1.E-121.E-111.E-101.E-091.E-081.E-071.E-061.E-051.E-041.E-03-30-25-20-15-10-50VD(V)ABS(IS) (A)Trench P MOSFET Device Performance * 20V PMOS Source - Drain reverse bias BV test I-V curve 1. MVI will be a trusted foundry partner to satisfy customers requirement s

31、uch as order capacity and device performance2. MVI own strong manufacture and development team with average over 10 years fab production experience 3. MVI frequently co-work with customer to develop more advanced Power MOSFET device base on marketing request4. Excellent product yield and foundry ser

32、vice are the best promise to our customerMaterial Science Service The Tier-one Lab in Materials Science ServiceVirtual Lab for Lab less house efficiency cost extension develop with partnerSupporting/Innovation centerMSSBusiness PromotionEngineering ServiceTEMSEMFIBIntegrated ServiceSalesR&DLogistics

33、Organization ChartMaterialAnalysisElectrical AnalysisPhysical AnalysisTesterEMMI, OBIRCH,LC hot spot, E-beam testerMemory testerVCSEMFIBMarkMemory CellLogic CircuitCorrectiveActionReportDelayerAugerSIMSSEM/EDSTEM/EELS/EDSFIB Cutplan-viewx-sectionalConfirm failure characterizationInformation review i

34、s needed prior to initial analysis strategyFailure Information Review Failure VerificationExternal InspectionCurve Tracing X-ray Inspection CSAM Failure site localizationschematic databasesDecapsulationImaging techniques to isolate suspected failure circuitDecapsulation Internal Inspection Hot Spot

35、Detection Light Emission Microscopy Microprobing Sample preparation and defect tracingiterations between the two steps are required due to failure evidences usually imbedded under covered metal linesdeprocess, delayerpolish, cross-sectioncircuit editingInternal probing Root cause determinationDesign

36、, Process, Assembly, or Test 2nd electronBSEEDS WDSAESCLTransmissionelectronDiffractionelectronEELSRBSEDS2nd electron2nd ionXRDTXRFFTIRESCAIncident BeamWhat kind of benefits MA brings to you ? R&D Speed-Up Yield Improvement Reliability EnhancementJOEL JSM-6700FTopography:surface features, texture of

37、 specimen, Morphology:shape, size, arrangement of surface particleComposition:element identification and their relative ratioLead-Free Project to Analyze Sn / Ag / Cu / Pb Secondary Electron Image100%8970.54Totals 0.1422.15 PbM 97.968823.43 SnL 0.9980.67 Ag L 0.9244.29 Cu L Atomic% Weight% Element 1

38、00%8970.54Totals 0.1422.15 PbM 97.968823.43 SnL 0.9980.67 Ag L 0.9244.29 Cu L Atomic% Weight% Element Sample #PbSurface-sensitive spectroscopic technique used for elemental analysishigh sensitivity for all elements except H and He monitoring method for surface cleanliness of sample quantitative comp

39、ositional analysis of sample surface regionPad size : 45um20.00E+002.00E+044.00E+046.00E+048.00E+041.00E+051.20E+051.40E+051.60E+0520040060080010001200140016001800Counts / sKinetic Energy (eV)P1COAlSiISTI Material Analysis0102030405060700100200300400500Peak to Peak Atomic PercentEtch Time (s)Peak to

40、 Peak Atomic Percent ProfileCNOFAlSi06/08/04 15:05:36Page 1 of 1.Incident Beam Energy : 10keV.Ion Beam Energy : 1keV / 1uA.Etching Rate : 0.1nm/sec.Energy Resolution : CRR=10(0.1eV).AlAlxOy20nmJOEL JEM-2100FMicrostructure: lattice image Phase: amorphous/poly/single crystal, stoichiometryCrystalline

41、defect: substrate defect, induced by implantation/process0.09 um(a) (b) (c) (d) M1-AlAlCuAlM2-AlM4-CuM2-AlTEM/EDS Analysis M1-AlM1-Al1E+161E+171E+181E+191E+201E+211E+220500100015002000DEPTH (Angstroms)CONCENTRATION (atoms/cc)Dose As = 2.986E+15Dose As = 2.975E+15Dose As = 2.984E+15Shallow Arsenic Im

42、plantHigh Precision Implant CharacterizationSIMS craterReverse Engineering of LED (III-V)LED Structure AnalysisPrecision Cut:specific location, particle, via/contact X-images Sample preparation: TEM, SEM, special requestMicrosurgery: circuit repair, artificial pad, dielectric bufferAcceleration Volt

43、age:30kVSecondary Electron Resolution:5 nmMaximum Probe Current Density: 20A/cm2Maximum Probe Current:20nAObservation Field0.5X0.5um2 2.4X2.4mm2Scan Rotation: 0 359.9o / 0.1o stepSample size:50mm Square, Thickness 12mmFIBSII SMI 2050C filmCuNiAuHole size is about 100 nmPlug width is about 350 nmNon-

44、destructive examination成份分析成份分析微區分析微區分析 AES, EELS/TEM, EDS/TEM, AES, EELS/TEM, EDS/TEM, EDS/SEM EDS/SEM表面分析表面分析 AES, SIMS, XPSAES, SIMS, XPS薄膜分析薄膜分析 RBS, EDS/TEM, EDS/SEMRBS, EDS/TEM, EDS/SEM化學態分析化學態分析 XPS, AES, FTIR, EELS/TEMXPS, AES, FTIR, EELS/TEM結構觀察結構觀察表面形貌表面形貌 OM, SEMOM, SEM微區結構微區結構 TEM, SEM,

45、FIBTEM, SEM, FIB晶格結構晶格結構 TEMTEM雜質分析雜質分析掺雜元素掺雜元素 SIMS, SRPSIMS, SRP污染元素污染元素 SIMS, TOF-SIMSSIMS, TOF-SIMS整合服務整合服務Deliver total solution for your Deliver total solution for your problemsproblems新竹市埔頂路新竹市埔頂路2727號號1 1樓樓1F, No. 27, Pu-ding Rd., 1F, No. 27, Pu-ding Rd., Hsinchu 30072, Taiwan, R.O.C.Hsinchu 30072, Taiwan, R.O.C.Tel: 886-3-6663298Tel: 886-3-6663298Fax: 886-3-666-3190Fax: 886-3-666-3190Service ItemContact Info